Articles you may be interested inEffect of interfacial reactions between atomic-layer-deposited HfO 2 films and n -GaAs (100) substrate using postnitridation with NH 3 vapor Appl. Phys. Lett. 97, 092113 (2010); 10.1063/1.3481801 Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemicalvapor-deposited Hf-O films on Si Characteristics of HfO 2 / HfSi x O y film as an alternative gate dielectric in metal-oxide-semiconductor devices

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HfO2 thin films were deposited on Si wafers by a chemical vapor deposition (CVD) technique at temperatures ranging from 200 to 400°C using a new carbon-free precursor false[normalHffalse(NO3)4false]. The growth behavior was under a steady state when the interfacial oxide layer was excluded in film thickness estimation by ellipsometry. The as-grown interfacial layer formed at 200°C was apparently composed of Hf, Si, and O. Postannealing under a N2 atmosphere at temperatures >500°C resulted in a decrease in interfacial layer thickness by decomposition of the Hf-Si-O layer to SiO2 and HfO2. The HfO2 film showed a crystalline microstructure even in the as-deposited state when the film thickness was 170 Å. However, the films were amorphous when the film thickness was <70 Å. The dielectric constant of the as-deposited and postannealed HfO2 thin films were approximately 18 and 22, respectively. © 2001 The Electrochemical Society. All rights reserved.

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