A system with two interacting plasma fluxes for the deposition of high-temperature superconductor films is presented. This system prevents the appearance of particles on a film surface, and permits one to obtain YBa2Cu3O7−x films with the surface defect concentration as low as 104 cm−2, a high critical temperature of 90 K, and a critical current density of 4×106 A/cm2 at 77 K. It is shown that high morphological quality films are obtained at a specific target-substrate distance.

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