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BEOL yield characterization is increasingly difficult on advanced technology nodes using traditional short flow devices. A new BEOL Technology Development Read Only Memory (TDROM")' has been used to successfully drive BEOL yield learning on the 65 nm node. The addressable nature of the TDROM"^ allows isolation of all fails to within 2 um2 using known memory testing techniques which has resulted in accelerated yield learning, and PFA utilization. The eight megabit array size allows exhaustive DOE'S for all design rules and margins.

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