Low pressure chemically vapor deposited polysilicon deposition was studied from 525 to 650~ The silicon appears to be amorphous with a smooth surface up to 550~ and completely crystalline above 600~ The transition region is found to be from 560 to 590~ This transition is marked by sharp crystallographic and resistivity changes. The smooth surface morphology of the amorphous silicon is found to be preserved after POC13 doping and a 1000~ oxidation. The preservation of this smooth morphology is demonstrated to be due to the presence of a native oxide on the surface of the silicon upon exposure to atmosphere. However, an in situ anneal of amorphous silicon at 610~ results in large coarse crystals with rough surface morphology and disparate orientation. The smooth morphology of the 550~ silicon is found to be transmitted through subsequent polycide structure layers. The impact on device reliability is discussed. The amorphous silicon is found to have a higher plasma etch rate than the polysilicon. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.138.73.68 Downloaded on 2014-12-22 to IP

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Metal-oxide-semiconductor (MOS) capacitance–voltage (C–V) characteristics in the accumulation mode have been measured and simulated for polycrystalline Si gate MOS capacitors with various oxide thicknesses (40–200 Å) on p-type (100) Si substrates. The discrepancy between experimental data and theoretical prediction by classical MOS theories is clarified by taking quantization effects into account. The experimentally determined ‘‘effective dielectric thicknesses’’ in the semiconductors are found to be in good agreement with the values calculated from quantization effects for MOS capacitors with thinner oxides (<80 Å). The effective dielectric thicknesses at oxide electric fields of 2–6 MV/cm have been determined to be 2–3 Å larger for the quantum mechanical case than for the classical case.