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An experimental investigation was made of the time profile of Stokes pulses as a function of the energy, repetition frequency, and conditions of focusing of laser pulses in various systems of stimulated Brillouin scattering (STBS) mirrors. Cascade STBS shortening of laser pulses reduced the duration from 12 nsec to less than 0.2 nsec in the case of Stokes pulses.

We have directly measured the effect of the bottom shape in the offset spacer on the two-dimensional (2-D) carrier profiles of the sub-50 nm p-metal oxide semiconductor field-effect transistors (MOSFETs). It has been observed that the doping profile of the Sb pocket implanted with a high angle tilt is very sensitive to the bottom shape of the notched offset spacer. It has been confirmed that the Sb pocket deeply implanted leads to the decrease of 2 nm in the average overlap length of the extension region at a depth of 5 nm when the bottom shape is slightly upped at the notched offset spacer. The increased effective channel length is considered to enhance the dependence of the threshold voltage on the body bias voltage. Moreover, it is considered from the measured carrier profiles that the reduction in carrier concentration in the top channel region lowers the threshold voltage.