Observations are made of crystalline states and measurements of Hall coefficient and conductivity distributions in germanium substrate implanted with 6 x 1013 to 6 x lo1' boron per cm2 at 30 keV before and after annealing a t 500 "C. I n the as-implanted specimen at the dose 6 x 10l6 e n + the concentration of acceptors is more than two orders of magnitude above the maximum solid solubility of boron in germanium. I n this case between an amorphous layer and the single crystal a broad (1200 A) damaged, but high conductivity region exists in which the carriers are generated by the implanted boron atoms and radiation acceptors. The anneal treatment influence on the crystal lattice reordering is investigated by the observation of the implanted surface using electron diffraction technique. I3poBeAem.r 3~1 e~~p o~o r p a # u s e c~a e mcaeaoBaHm, a Tawue ~3~e p e~m IIOCTO-H H H O~~ X o n m EI npo@xmet pacnpenenema I I~O B O~H M O C T M no m y 6~1 i e ~O H H O -a~e p r~e t 30 keV B naanaao~e no3 6 x 1013 EO 6 x lo1' B o6nacm D > 6 x 6 0~6 a p n M p o~~~ Ha EBa nopngHa npesbmaeT npenea pacTBopmocTM 6opa B JIerMpOBaIiHbIX CJIOeB B MOHOHpMCTaJIJlaX repMaHMJT, 06JIyYeHHbIX MOHSIMM B' C X loi5 Cm-2 KOHqeHTpaqMH aKqeIIT0pOB B 06JIyYeHHOM CJIOe HeIIOCpeACTBeIIHO IIOCJIe RpMaHHH. npM 3TOM-MemAy aMOp#HOfi 06JIacTL10 M MOHOKPMCTZIJIJIOM 06pa3yeTCfI IIpOTfl2KeHHblfi (1200 A) XOpOIIIO IIpOBOJXJTIIWfi YaCTMYHO pa3yIIOpfIAOseHHbIfi C J I O t , B KOTOPOM HOCMTeJIH reIIepMpyIoTCcI 3JIeHTpMYeCKH aKTMBHbIMM aTOMaMki 6opa I4 paHPiaUH0HHbIMM aKqeIITOpaMH. kI3yseHO BJIHRHge ~e p~o o 6 p a 6 0~~a H a TOJIUIMHbI aMOp@HbIX M ,,IIepeXOAHbIX" CJIOeB.

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