Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V ) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

Si ion implantation with subsequent annealing was used to improve the irradiation hardness of SOI wafers. The reduced negative shifts in the threshold voltage of the n-channel transistors showed that the total dose radiation hardness was remarkably enhanced by this modification process, and the pseudo-MOS method was used to test the I d -V G characteristics of the SOI samples before and after irradiation. Photoluminescence (PL) spectra demonstrated that Si nanoclusters were formed during annealing in the buried oxide of the implanted samples, which were possibly the main candidates for charge compensation. X-ray photoelectron spectroscopy (XPS) results also suggested that reduction of the threshold voltage shifts was accompanied with the formation of Si nanoclusters near the peak of the implants. Furthermore, the effect of positive charge buildup can be partly reduced as a result of the improvement on proton trapping in the bulk of the oxide due to the implantation induced nanoclusters.