This paper reports on the effect of Ni particle structures on the light extraction in 600 nm AlGaInP light-emitting diodes (LEDs). A Ni film was deposited on top of a gallium phosphide (GaP) layer and the surface texture was improved by an ammonia (NH 3 ) plasma etching process into a chamber resulting in the formation of Ni particles with an average size of 10 nm. AlGaInP LED with the Ni particle shows an increase in the light extraction by 75% and a higher emission intensity with a percentage increase of 112.5% as compared with the conventional AlGaInP LEDs.

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