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A high-speed and energy-efficient oxide-confined 850 nm verticalcavity surface-emitting laser (VCSEL) for optical interconnects is presented. A record-high modulation bandwidth of 30 GHz is reached for a 3.5 µm oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy-efficient transmission with a dissipated heat energy in the VCSEL of <100 fJ/bit at 25, 40 and 50 Gbit/s.

Error-free transmission is demonstrated at bit rates up to 57 Gbit/s back-to-back, up to 55 Gbit/s over 50 m fibre and up to 43 Gbit/s over 100 m fibre using an oxide-confined 850 nm high-speed vertical cavity surface-emitting laser with a photon lifetime optimised for high-speed data transmission.

Abstract:We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxanebis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon-and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

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