No abstract

Prior knowledge of the students before the teaching is one of the issues that the teacher should deal with. It is also important to identify students' prior knowledge about electricity, which contains many misconceptions and misunderstandings. In this study, it is aimed to develop a multiple choice achievement test in order to determine the prior knowledge of tenth grade students and to identify in which concepts the students have incomplete information. In this research, cross-sectional survey model, which is a kind of survey methods, was used. An achievement test consisting of 15 multiple-choice questions with five options was developed and applied to 373 tenth grade students. Mean and factor analysis were used in the analysis of the obtained data. As a result of the research, it was determined that students were successful in symbols of electrical circuit elements in terms of prior knowledge. It can be said that the students are weak in terms of building electrical circuit, resistance of the bulb, serial and parallel connection and Ohm's law. It may be suggested to physics teachers working in high schools to remind them about the concepts of building electrical circuit, resistance of the bulb, serial and parallel connection before starting the teaching of electricity.

Au/n-Si/Au-Sb Schottky diode was fabricated, and electron irradiation was applied to the diode at 25 gray and 50 gray doses. The effects of irradiation on the electrical characteristics of the 450 oC annealed diode were analyzed by means of current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and capacitance-frequency (C-f) measurements before and after irradiation. With increasing irradiation, changes were observed in the ideality factor, barrier height, series resistance, dielectric constant and diffusion potential values depending on the dose used. The n value was found to be 1.231, 1.306, and 1.350 before irradiation, after 25-gray, and after 50-gray irradiation, respectively. The Φb before irradiation was 0.742 eV. Depending on 25 and 50 gray irradiations, it was calculated as 0.768 eV and 0.761 eV, respectively. In addition, there was a decrease in leakage current by irradiation. Depending on the increasing dose, while the capacitance and donor concentration of the diode decreased, there was an increase in the diffusion potential and Fermi energy level. It has been observed that the diode deviates from ideality due to defects in the diode interface depending on irradiation. It has been observed that electron irradiation causes changes in the electrical properties of the Au/n-Si/Au-Sb Schottky diode.