Flexible semitransparent perovskite solar cells (ST-PSCs) have great potential for use in high-density energy systems, such as building or vehicle integrated photovoltaics, considering the great features of PSC devices, including high performance, light weight, thin-film processability, and high near-infrared transmittance. Despite numerous efforts toward achieving efficiency and flexibility in ST-PSCs, the realization of high-performance and operational stability in ST-PSCs still require further development. Herein, we demonstrated the development of highly efficient, stable, and flexible ST-PSCs using polyimide-integrated graphene electrodes via a lamination-assisted bifacial cation exchange strategy. A high-quality perovskite layer was obtained through the cation exchange reaction using the lamination process, and ST-PSCs with 15.1% efficiency were developed. The proposed ST-PSC device also demonstrated excellent operational stability, mechanical durability, and moisture stability owing to the chemically inert and mechanically robust graphene electrodes. This study provides an effective strategy for developing highly functional ST-perovskite optoelectronic devices with high-performance and long-term operational stability.

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Semiconducting materials offer promising opportunities as an ideal platform for localized surface plasmon resonance (LSPR)-free surface-enhanced Raman spectroscopy (SERS)-based molecular detection. However, conventional semiconductor-based SERS substrates have various drawbacks that...

The introduction of heteroatoms is a widely employed strategy for electrocatalysis of transition metal dichalcogenides (TMDs). This approach activates the inactive basal plane, effectively boosting the intrinsic catalytic activity. However, the effect of atomic configurations incorporated within the TMDs' lattice on catalytic activity is not thoroughly understood owing to the lack of controllable synthetic approaches for highly doped TMDs. In this study, we demonstrate a facile approach to realizing heavily doped MoS 2 with a high doping concentration above 16% via intermediate-reaction-mediated chemical vapor deposition. As the V doping concentration increased, the incorporated V atoms coalesced in a manner that enabled both the basal plane activation and electrical conductivity enhancement of MoS 2 . This accelerated the kinetics of the hydrogen evolution reaction (HER) through the reduced Gibbs free energy of hydrogen adsorption, as evidenced by experimental and theoretical analyses. Consequently, the coalesced V-doped MoS 2 exhibited superior HER performance, with an overpotential of 100 mV at 10 mA cm −2 , surpassing the pristine and single-atom-doped counterparts. This study provides an intriguing pathway for engineering the atomic doping configuration of TMDs to develop efficient 2D nanomaterial-based electrocatalysts.

Epitaxial growth of highly oriented transition metal dichalcogenides (TMDs) has been extensively studied to preserve their intrinsic properties and realize functional devices based on their superior material characteristics. However, the development of a facile synthesis approach with broad applicability for achieving aligned TMDs is challenging, particularly in terms of liquidprecursor-based chemical vapor deposition (CVD). Therefore, an innovative CVD growth model that enabled epitaxial growth of highly oriented TMDs using liquid precursors was proposed in this study. The vapor pressure of the chalcogen was found to significantly affect the growth dynamics of TMDs, with the quasi-static distribution promoting the migration of sulfur atoms to energetically favorable sites guided by the lattice structure of the substrate; this enabled the growth of highly aligned TMDs. Moreover, the aligned MoS 2 exhibited remarkable electrical properties compared to those of previously reported TMDs synthesized via liquid-precursor-mediated CVD. These results provide important insights into the growth kinetics for the synthesis of highly oriented TMDs.