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A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation Plasma density distribution of the FFTB plasma lens calculated by direct simulation MonteCarlo method AIP Conf.

band-edge silicide, such as PtSi, provides an additional leverage to further reduces the contact resistivity by This paper proposes the implementation of a dopant promoting thermionic injection. Depending on the process segregated band-edge silicide using implantation-to-silicide sequence, dopant-segregation (DS) technique can be and low temperature activation (500°C). The integration of implemented in three different flavours [5]: i) implantation platinum silicide coupled to boron segregation demonstrates a into Si followed by metal deposition and silicidation 5000 enhancement of the current drive over the dopant-free annealing, ii) implantation-through-metal (ITM) followed by approach. RF characterization unveils a cut-off frequency fT dopant segregation induced by the silicidation thermal budget of 180 GHz at Lg 30 nm without application of channel and finally, iii) implantation-through-silicide (ITS) followed stressors.by dopant pile-up initiated by a low temperature 1-Introduction post-silicidation activation step.Over the last decade, the development of metallic ITM ITS source/drain (S/D) has emerged as a potential performance booster because of the increasing impact of S/D resistance on transistor performance, especially in the case of ultra-thin 11B2 2 501 and multiple-gate thin body MOSFETs. Although, promising results have been reported for p-MOSFETs using platinum silicide (PtSi) [1], the gain in S/D sheet resistance has been overwhelmed by the contact resistance at the RTAsili A pon source/channel interface due to a Schottky barrier (SB) in activation activation excess of 0. 1eV [2]. Dopant segregation (DS) at the silicide/silicon interface proves to efficiently modulate the Schottky barrier height while avoiding issues associated to doped junctions. So far, the so-called dopant segregation Fig. 1: Schematic illustration of the ITM and ITS schemes for the technique has been implemented along with midgap silicides, implementation of metallic low Schottky barrier S/D in UTB S01 MOSFETs. e.g. NiSi [3], CoSi2 [4] but involved dopant implantation and high temperature activation before the silicidation step. In The advantage associated to the two last techniques (Fig. 1) is contrast, this work explores the implementation of DS to confine dopants in the silicide or the metal layer without characterized by the three distinctive features: i) the generation of defects, thus enhancing the segregation implant-to-silicide (ITS), ii) band-edge low Schottky barrier effect governed by solid solubility and diffusion mechanisms. to holes (PtSi) and iii) thermal budget limited to 500°C. For As the silicidation reaction proceeds, the formation of the the first time, p-type thin-film SOI MOSFETs that integrate silicide alloy naturally involves a profound re-arrangement of S/D junctions with the above characteristics are demonstrated. bonds between Pt and Si. During this phase of material Beyond DC characterizations, RF performance is reported for reconstruction, it is speculated that boron can be incorporated a physical g...

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