No abstract

Ternary paramagnetic additions to Permalloy have been used to produce magnetic films with salient modifications of the coercive and anisotropy properties. Films from 4000 Å to 12 000 Å were deposited on glass substrates by application of electron-beam evaporation techniques. Vanadium, Gadolinium, Cobalt, Titanium, and Chromium are shown to be the most advantageous additions for selectively controlling memory characteristics (coercive force, hard axis anisotropy, and dispersion). Nondestructive readout (NDRO) and destructive readout (DRO) memory subsystems have been designed and built using these films in conjunction with a ferrite keeper. The NDRO memory employs an ultralow dispersive read film which utilizes vanadium, and a storage film with high coercivity containing cobalt. The DRO memory eliminates the storage film and operates with a modified read film.

No abstract

No abstract

No abstract