(Rrcrived 3 April 1995 by D. Van qVck)a-SiO, films of varying stoichiometr)r have been prepared by low temperature plasma enhanced chemical vapor deposition.The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the fdms have been found to depend on initial stoichiometry of the films.
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