The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.

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We present direct experimental observation of exciton-phonon bound states in the photoluminescence excitation spectra of isolated single-walled carbon nanotubes (SWNT) in aqueous suspension. The photoluminescence excitation spectra from several distinct SWNTs show the presence of at least one sideband related to the tangential modes, lying 0.2 eV above the main absorption or emission peak. Both the energy position and line shapes of the sidebands are in excellent agreement with recent calculations [Phys. Rev. Lett. 94, 027402 (2005)] that predict the existence of exciton-phonon bound states, a sizable spectral weight transfer to these exciton-phonon complexes, and that the amount of this transfer depends on the specific nanotube structure and diameter.

By using a sample of DNA-wrapped single-wall carbon nanotubes strongly enriched in the (6,5) nanotube, photoluminescence emissions observed at special excitation energy values were identified with specific mechanisms of phonon-assisted excitonic absorption and recombination processes associated with (6,5) nanotubes, including one-phonon, two-phonon, and some continuous-luminescence processes. Such detailed processes are not separately identified in three-dimensional semiconducting materials. A general theoretical framework is presented to interpret the experimentally observed phonon-assisted processes in terms of excitonic states.

The Raman spectrum of monolayer graphene deposited on the top of a silicon oxide/silicon substrate was investigated as a function of temperature up to 515 K. An anomalous temperature dependence of the Raman features was observed, including an important frequency upshift for the Raman G band at room temperature, after the heating process. On the other hand, the frequency of the Raman G(') band is only slightly affected by the thermal treatment. We discuss our experimental results in terms of doping and strain effects associated with the interaction of graphene with the substrate and with the presence of water in the sample. We conclude that the doping effect gives the most important contribution to the spectral changes observed after the thermal cycle.