FeAl were investigated in-situ by angle resolved ultraviolet photoemission spectroscopy (ARUPS). The samples were prepared by a sputtering process optimized for tunneling junction preparation, the photoemission process in normal direction of the (001)-oriented thin films was excited by a Helium gas discharge lamp (hν = 21.2eV and hν = 40.8eV). The spectra of clean samples are compared with calculations of the total and partial bulk density of states and are evaluated within the three-step model of photoemission. Basic agreement with theoretical predictions of the bulk band structure is concluded. At oxygen exposures of the thin films of only 1 Langmuir a chemisorption phase with significant changes of the valence-band spectrum near the Fermi-energy is observed. At 10L oxygen the spectra are indicative of an oxide within the UPS probing depth.Confidential: not for distribution.