Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential.

The experimental valence band photoemission spectrum of semiconductors exhibits multiple satellites that cannot be described by the GW approximation for the self-energy in the framework of many-body perturbation theory. Taking silicon as a prototypical example, we compare experimental high energy photoemission spectra with GW calculations and analyze the origin of the GW failure. We then propose an approximation to the functional differential equation that determines the exact one-body Green's function, whose solution has an exponential form. This yields a calculated spectrum, including cross sections, secondary electrons, and an estimate for extrinsic and interference effects, in excellent agreement with experiment. Our result can be recast as a dynamical vertex correction beyond GW, giving hints for further developments.Photoemission is a prominent tool to access information about electronic structure and excitations in materials. Modern synchrotron sources can provide detailed insight, thanks to their high intensity and broad photon energy range. But the interpretation of the experimental data is far from obvious, and theory is an essential complementary tool. However, ab initio calculations typically focus on bulk bandstructure [1, 2]; thus surface effects are ignored, and satellites are not included. The latter are a pure many-body effect due to coupling to excitations of the material. Such many-body effects are contained in approaches developed for correlated materials [3,4] however, these are usually based on models with short-range interactions, whereas satellites such as plasmons involve long-range effects. Plasmon satellites have been extensively studied in core-level experiments [5]. There they can be described by a theoretical model where a single dispersionless fermion couples to bosons. The resulting exact Green's function has an exponential form given by the so-called cumulant expansion (CE). A Taylor expansion of the exponential leads to a well defined quasi-particle (QP) peak followed by a decaying series of plasmon satellites at energy differences given by the plasmon energy, consistent with experimental observations [6][7][8][9][10]. In the valence region, plasmon satellites are much less studied, though ab initio approaches can provide a good starting point. At high photoelectron energies the photoemission spectrum is approximately proportional to the intrinsic spectral function A(ω) = −(1/π)Im G(ω), where G is the one-particle Green's function. The latter is typically calculated using the widely used GW approximation (GWA) [7,11,12]. In principle, the GWA contains correlations effects beyond the quasiparticle approximation. However, these additional features are rarely calculated due to computational complexity and, more importantly, the serious discrepancies between GWA and experiment (see e.g. [13][14][15][16]). The CE has also been used for the homogeneous electron gas [17] and simple metals [14,15], yielding an improved description of satellites over GW. Silicon [16] and graphite [18] ...

Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems which are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by Molecular beam Epitaxy (MBE) on graphene. Reflection high-energy electron diffraction (RHEED) images exhibited sharp streaky features indicative of high quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW hetero-interface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relatively to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high resolution X-ray photoemission spectroscopy (HR-XPS) measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow deeper understanding of the interlayer interactions and the electronic structure of GaSe/graphene vdW heterostructure.

Ultrafast transient absorption measurements have been used to study multiple exciton generation in solutions of PbS nanoparticles vigorously stirred to avoid the effects of photocharging. The threshold and slope efficiency of multiple exciton generation are found to be 2.5 ± 0.2 ×E(g) and 0.34 ± 0.08, respectively. Photoemission measurements as a function of nanoparticle size and ageing show that the position of the valence band maximum is pinned by surface effects, and that a thick layer of surface oxide is rapidly formed at the nanoparticle surfaces on exposure to air.

demonstrate the tunability of the quasiparticle energy gap of few layered gallium selenide (GaSe) directly grown on a bilayer graphene substrate by molecular beam epitaxy (MBE). Our results show that the band gap is about 3.50 ± 0.05 eV for single-tetralayer (1TL), 3.00 ± 0.05 eV for bi-tetralayer (2TL) and 2.30 ± 0.05 eV for tritetralayer (3TL). This band gap evolution of GaSe, in particularly the shift of the valence band with respect to the Fermi level, was confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and our theoretical calculations. Moreover, we observed a charge transfer in GaSe/graphene van der Waals (vdW) heterostructure using ARPES. These findings demonstrate the high impact on the GaSe electronic band structure and electronic properties that can be obtained by the control of 2D materials layer thickness and the graphene induced doping.