Accuracy of a laser triangulation sensor have been studied.The experiments showed that the accuracy was dependent on the scattering characteristics of the targets. For the quasi Lambertian surfaces, nonlinearity error was less than 0.1% of the measurement range.

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Advances in modern semiconductor integrated circuits have always demanded faster and more sensitive analytical methods on a large-scale wafer. The surface of wafers is fundamentally essential to start building circuits, and quantitative measures of the surface potential, defects, contamination, passivation quality, and uniformity are subject to inspection. The present study provides a new approach to access those by means of terahertz (THz) emission spectroscopy. Upon femtosecond laser illumination, THz radiation, which is sensitive to the surface electric fields of the wafer, is generated. Here, we systematically research the THz emission properties of silicon surfaces under different surface conditions, such as the initial surface with a native oxide layer, a fluorine-terminated surface, and a hydrogen-terminated surface. Meanwhile, a strong doping concentration dependence of the THz emission amplitude from the silicon surface has been revealed in different surface conditions, which implies a semiquantitative connection between the THz emission and the surface band bending with the surface dipoles. Laser-induced THz emission spectroscopy is a promising method for evaluating local surface properties on a wafer scale.

We studied the phased-array effects in terahertz emission from semiconductor surfaces upon femtosecond laser illumination. A finite-difference time-domain simulation and experimental observation of the radiation patterns were utilized to examine the optical excitation at normal to the semiconductor surface and oblique angles of 30° and 45° with diameters of ∼10 and 275 μm. The results revealed that there exists a clear phased-array effect for the defocusing conditions. The larger diameter induced a pronounced directivity of the emission owing to the constructive interference of multiple point sources obeying the law of linear superposition, whereas the radiation patterns at smaller diameters were explained as the dipole point source. This finding, in addition to previous studies, will provide a better understanding and contribute to applications of terahertz emission spectroscopy in the field of semiconductor research and development.

The red side (lower-frequency) mode of a two-mode stabilized 633-nm He-Ne laser has been locked to the hyperfine structure of the P() line of (127)I(2) by means of frequency modulation spectroscopy enhanced by an external optical cavity. Both the red side and blue side (higher-frequency) modes of the laser exhibit a frequency stability of 2.3 x 10(-11) tau(-1/2). In addition, the frequency fluctuations of the blue side mode are detected by a Fabry-Perot cavity and compensated through an acousto-optic frequency shifter. The short-term stability of better than 3 x 10(-11) is attained for integration times of between 2 x 10(-3) and 2 x 10(-1) s.