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This paper reports on the memory characteristics of solution-processed organic phototransistors (OPTs) based on poly(3-hexylthiophene) with organic semiconductor floating gates and their application to image sensors. The addition of a small amount of soluble fullerene to the floating-gate layer enhances the erasing characteristics, which helps increase the on- and off-current ratio of the OPT memories. Furthermore, the OPT memories can achieve a long extrapolated retention time (>109 s) and high photosensitivity upon illumination of as weak as 10 μW cm‒2. A black and white pattern printed on paper can be imaged using the solution-processed OPT memory array.

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