In this paper presented the results of the ionizing radiation detector modules, which developed on the basis of a new generation of micropixel avalanche photodiode (MAPD) of MAPD-3NK type. The samples were produced in cooperation with the Zecotek Photonics and characterized by the following parameters: sensitive area—3.7 mm × 3.7 mm, density of pixels—10000 pixels/mm2, photon detection efficiency—35–40% (at wavelength of 450–550 nm) and operation voltage—91 V. The beta particle and gamma ray detection performance of MAPD with different single scintillation crystal such as NaI, LFS and p-terphenyl was investigated. The gamma ray detector modules demonstrated a perfect linear behavior of detected signal amplitudes as a function of the gamma ray energy (from 26.3 keV up to 1.33 MeV). Energy resolution for 662 keV gamma rays was 11.2% and the minimum detectable energy was 26.3 keV.

In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.