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Growth technology of new narrow‐gap semiconductor solid solution ZnCdHgTe proposed as an alternative material to CdHgTe due to the stabilizing effect of Zn‐Hg bond in the lattice of the compound is presented. Results of electrical examinations performed at the first time for the heterostructures based on ZnCdHgTe are also reported.

PACS 62.20.-x, 68.35.GyThe electron-deformation interaction is investigated in PbS/ZnSe heterostructures obtained by MBE growth of thin PbS films on monocrystalline ZnSe substrates with lattice parameter mismatch more than 4%. Within the framework of an electron-deformation model it is shown that lead sulfide films undergo the lattice compression strain or lattice tensile strain depending on direction of applied electric field.

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