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Analytical and numerical models of a lateral hot-electron phototransistor (LHEPT) are developed. The principle of operation of the LHEPT is associated with intersubband absorption of infrared radiation in the base, which results in stimulation of the hot-electron injection from the emitter to collector. The responsivity of the LHEPTs based on the structures with two-dimensional channels is evaluated as function of the structure parameters, applied voltages and energy of incident photons.

A bipolar transistor incorporating a resonant-tunnelling structure in its collector is investigated using both analytical a n d ensemble Monte Carlo particle models. A resonant-tunnelling transistor of t h i s type has two current states for a certain range of collector-base voltage. The double-valued characteristics and bistability effect are connected with electron space charge in t h e collector region