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This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO 2 /Al 2 O 3 /ZrO 2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperaturedependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.Index Terms-High-k, leakage model, metal-insulator-metal (MIM) capacitor, reliability, ZrO 2 .

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Using the tracer-standard sectioning technique the impurity diffusion of indium in copper has been investigated in the temperature range from 798.1 to 1081.0 "C.

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