The recombination dynamics is studied in viscous electron-hole plasma, consisting of electrons and photo-generated heavy and light holes, formed in high-mobility mesoscopic GaAs channel. It is shown that an increase in the pump power reduces the concentration and mobility of background electrons, which, in turn, slows down their recombination with photogenerated holes. At a critical pump power, the recombination time begins to decrease, which is a consequence of the transition of a viscous electron-hole plasma from the hydrodynamic regime to the Drude di¤usive regime. The observed transition occurs when the scattering of electrons with disorder begins to dominate over electron-electron scattering, which leads to the transformation of an inhomogeneous Poiseuille charge ow into a homogeneous di¤usion ow. As a result, an optical analogue of the Gurzhi effect has been found.
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