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A joint research and development program is underway to develop steady-state intense ion sources for the two energy extremes of MeV and hundreds of eV. For the MeV range the investigations were focused on charge-state enhancement for ions generated by the modified Bernas ion sources. Based on the previously successful ITEP experience with the e-metal vapor vacuum arc ion source [e.g., Batalin et al., Rev. Sci. Instrum. 75, 1900 (2004)], the injection of a high-energy electron beam into the Bernas ion source discharge region is expected to enhance the production of high charge states. Presented here are construction details and studies of electron-beam influence on the enhancement of ion-beam charge states generated by the modified Bernas ion source.

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

Since 2008 the ion beam irradiation modeling experiments for the testing of reactor materials radiation hardness are under development at the ITEP heavy ion RFQ injector with MEVVA ion source. Ion beam irradiation method has certain advantages for such tests. One of them is high speed of defect formation. Moreover, the irradiated samples can be investigated by traditional investigation methodic because they have not radioactivity induced. The special sample support with electrostatic deflector was constructed and installed at the injector output. The result of ion beam dynamics simulation throughout the deflector as well as the detailed description of the test facility is presented. The first experimental results are presented as well. They have been demonstrated promising results.

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