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Laser radiation is used for the deposition of dielectric erbium doped BaTiO3 thin films for photonic applications. Pulsed laser deposition with KrF excimer laser radiation (wavelength 248 nm, pulse duration 20 ns) is used to grow dense, transparent, amorphous, poly-crystalline and single crystalline erbium doped BaTiO3 thin films. Visible emission due to up-conversion luminescence (wavelength 528 nm and 548 nm) under excitation with diode laser radiation at a wavelength of 970-985 nm is investigated as a function of the erbium concentration of 1-20 mol % and structural film properties

Laser radiation is used both for the deposition of dielectric Er:BaTiO3 thin films and for material removal to generate wave guiding structures for photonic applications. Pulsed laser deposition with KrF excimer laser radiation (wavelength 248nm, pulsed duration 20 ns) is used to grow dense, transparent amorphous or crystalline erbium doped BaTiO3 thin films.Visible emission due to up-conversion luminescence (wavelength 528 nm and 548 nm) under excitation with diode laser radiation at a wavelength of 975 nm is investigated as a function of the erbium concentration and structural film properties.The dielectric films are micro machined to form optical wave guiding structures using Nd:YAG laser radiation (wavelength 532 nm, pulsed duration 40 ps) and Ti:sapphire laser radiation (wavelength 8 10 urn, pulse duration 63 -150 fs) by scanning the focussed laser beam relatively to the sample.

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