Now-a-days, Energy consumption is the major key factor in Memories. By switching the circuit in off mode and with an lower voltages, leads to decrease in an power dissipation of the circuit. Compared to DRAM SRAM'S are mostly used because of their data retaining capability. The major advantage of using SRAM's rather than DRAM'S is that, they are providing fast power-on/off speeds. Hence SRAM's are more preferred over DRAM's for better instant-on operation. Generally SRAM's are classified in to two types namely volatile and non-volatile SRAM's. A non-volatile SRAM enables chip to achieve performance factors and also provides an restore operation which will be enabled by an restore signal to restore the data and also power-up operation is performed. This paper describes about novel NVSRAM circuit which produces better "instant-on operation" compared to previous techniques used in SRAM's. In addition to normal 6T SRAM core, we are using RRAM circuitry (Resistive RAM) to provide better instant-on operation. By comparing the performance factors with 8T2R and 9T2R, 8T1R design performs the best in the Nano meter scale. Thus this paper provides better performances in power, energy, propagation delay and area factors as compared with other designs. Keyword:Energy . Generally SRAM's are preferred than DRAM's because of it's data retaining capability. SRAM performs both volatile and non-volatile operations. In our project we concentrate more on non-volatile SRAM which produces instant on operation [3] . These are designed in two technologies namely transistor technology and resistive technology. In accordingly, resistive technology uses 1R and 2R series. Compared to 2R series 1R produces more non-volatile operation effectively. Hence in this project we are using resistive technology which was often called as Resistive RAM (RRAM). For controlling or flowing of current/voltage through the resistor, we are using one additional transistor which was so called as control transistor. As we know that the transistor will act as a resistor in linear region. The RRAM circuitry which we are using in this paper was act as a "Mermistor" (memory resistor) [4].As the years progressed, expanded thickness 64kb & quicker get to have been accounted for NVSVRAM'S for military applications. The programming technology of an FPGA's are generally utilizes SRAM technology [1]. The energy consumption [5] has become a major source due to an considerably increase in an leakage current while we are reducing it's supply voltage and feature size of an SRAM. Instant