The temperature-dependent electrical conductivity and dielectric permittivity and room-temperature optical absorption spectra of La 3 Ga 5 SiO 14 (langasite) crystals grown under different conditions are measured. The resistivity and peak-loss temperature of the crystals are shown to be determined by the concentration of oxygen vacancies, which originate from changes in melt composition during crystal growth. The of langasite is shown for the first time to be anisotropic (measurements on Zand X -cuts). The properties of the crystals are suitable for the fabrication of stable piezoelectric elements capable of operating above 600 ° C. t δ tan t δ tan

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