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A monolithically integrated photodiode with SiGe:C anode, which exhibits an excellent spectral responsivity of typically 0.21/0.42/0.53 A/W at 410/660/785nm and sub-ns rise/fall times, fabricated without process modification is presented. The bandwidth of the photodiode exceeds 1300/490/260MHz at 410/660/785nm favoring this device for universal optical storage applications. By applying a reverse bias voltage up to 10 V the photodiode features responsivities up to 0.6 A/W for 410nm due to avalanche multiplication.

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