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1673 246-, 318-, 475-, and 540-kev transitions. The counting rates were not high enough to determine if the gamma rays with energies above 700 kev are also in coincidence with this transition.The 0.48-0.54 Mev region of the pulse-height distribution is shown in Fig. 4. The normal pulse-height distribution is plotted in each part of the figure as a solid curve, and the distributions from gamma rays which are in coincidence with the 246-, 318-, and 475kev photopeaks are plotted as dashed curves in (a), (b), and (c), respectively. From these curves one can con-* These investigations were

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Annealed molybdenum Permalloy sheets of ⅛−1 mil thickness have been photoetched to form transfluxor-element memory arrays utilizing inhibited-flux storage. Operating characteristics are summarized for single elements switched in 21 nsec−3.2 μsec. Some findings are: one to zero information flux ratios of 5:1 to 16:1, one to disturb noise flux ratios greater than 30:1, and Sw values of 1.7 to 0.14 oe μsec. In addition, operation is possible over a temperature range of −70° to +150°C without drive-current compensation. Also, for a ⅛-mil thick element switched in times less than 0.1 μsec, Sw values less than 0.2 oe μsec are obtained, indicating that fast switching may occur partially by uniform flux rotation. Array photoetching is described. Arrays containing 128 and 1152 elements have been fabricated. The latter permit a storage density of 250 000 bits/cu in. to be attained. The arrays receive a stress-relief treatment which results in a signal uniformity of ±3%. Photofabrication of windings has been accomplished also. This process generates continuous windings linking the transfluxor apertures.