Under atmospheric pressure, an argon plasma stream was sustained and its plasma characteristics were examined. The emission spectra of plasma created in a plasma jet system using argon gas were observed for three metals (Ag, Zn, and Cu) for the anode and varied flow rates ranging from 1–4 L/min. at constant voltage, and normal atmospheric pressure. The spectral lines of excited Ar, Ag, Zn, and Cu species were identified at a wavelength of (650–900) nm .The Debye length, sphere, and temperature of an electron are all measured. Optical emission spectrometer (OES) equipment was used to capture the spectrum produced by the plasma at various argon gas flow rates.The temperature and density of the electron (Te) and (ne) ranges for Ar-gas, Ag, Zn, and Cu-anode increased as the stream pace of argon gas to the plasma made by the release current (D.C.) expanded.(1.241- 1.473)eV and (1.93 x1018–6.38 x1018 ) cm-3 , (1.187– 1.245) eV and  (4.32 x1016–6.23 x1016 ) cm-3 , (1.374 -1.631)eV and (4.01 x1018 – 12.1 x1018 ) cm-3 respectively . The intensity of spectral lines, on the other hand, increased.

In this paper, Cadmium Oxide: Antimony has been deposited on porous silicon substrate using laser induces plasma technique. The solar cell parameters fill factor and efficiency; have been analyzed through changing of laser energy. The results shown that the change in electron mobility resulting from the change in laser energy leads to significant improvement in fill factor and efficiency. Moreover, there is slight improvement in the efficiency of CdO: Sb/Psi solar cell as a result of changing the thickness of CdO: Sb.

In this paper, ferric oxide nanoparticles) Fe2O3 NPs( were synthesized directly on a quartz substrate in vacuum by pulse laser deposition technique using Nd:YAG laser at different energies (171, 201,363 mJ/pulse). The slides were then heated to 700o C for 1 hour. The structural, optical, morphological, and electrical properties were studied. The optical properties indicated that the prepared thin films have an energy gap ranging from 2.28 to 2.04 eV. The XRD results showed no lattice impurities for other iron oxide phases, confirming that all particles were transformed into the α-Fe2O3 phase during the heating process. The AFM results indicated the dependence of nanoparticles size on the laser energy. As the laser energy increased, the average grain size increased from 72.6 nm to 79.02 nm. Hall effect measurement indicated that the film was an n-type semiconductor.

Fabrication of PSi is generated successfully depending upon photo-electrochemical etching process. The purpose is to differentiate the characterization of the PSi monolayer based on c-silicon solar cell compared to the bulk silicon alone. The surface of ordinary p-n solar cell has been reconstructed on the n-type region of (100) orientation with resistivity (3.2.cm) in hydrofluoric (HF) acid at a concentration of 2 ml was used to in order to enhance the conversion efficiency with 10-minute etching time and current density of 50 mA/cm2, The morphological properties (AFM) as well as the electrical properties have been investigated (J-V). The atomic force microscopy investigation reveals a rugged silicon surface with porous structure nucleating during the etching process (etching time), resulting in an expansion in depth and an average diameter of (40.1 nm). As a result, the surface roughness increases. The electrical properties of prepared PS, namely current density-voltage characteristics in the dark, reveal that porous silicon has a sponge-like structure and that the pore diameter increases with increasing etching current density and the number of shots increasing this led that the solar cell efficiency was in the range of (1-2%), resulting in improved solar cell performance.