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NRAM technology, a non-volatile memory based on the use of carbon nanotubes, overcomes the limitations of other memory technology types (including traditional Flash), for sub-40nm nodes, and is currently developed in manufacturing fabs. The NRAM technology process flow involves the deposition of a film of carbon nanotubes onto silicon wafers at several of the critical layers (using spin coating techniques). In this paper, we present the key steps of the development and characterization of carbon nanotube processes applied to NRAM technology, focusing on specific deposition techniques, thickness control, and defectivity.

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