The exploitation of CdZnTe crystals for the preparation of X-and gamma-ray detectors is still limited by the low yield in the production of high quality material. Twins and grain boundaries are still present in the state of the art melt-grown crystals, due to the difficulty to implement seeding procedures. In this paper, the zinc content of several CdZnTe crystals is analyzed in detail with the purpose of studying the phenomena occurring in the first part of growth. It is found that both the obtained experimental data as well as the ones reported by several other authors cannot be explained in terms of the usually reported model, based only on the effects of supercooling. Alternative explanations that take into account the possibility of nucleation from different sites and the possible effects of zinc thermodiffusion are suggested.These observations are very important in view of implementation of new growth configurations for obtaining larger single crystal yield.
Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices J.A method for reconstructing the spatial profile of the electric field along the thickness of a generic bulk solid-state photodetector is proposed. Furthermore, the mobility and lifetime of both electrons and holes can be evaluated contextually. The method is based on a procedure of minimization built up from current transient profiles induced by laser pulses in a planar detector at different applied voltages. The procedure was tested in CdTe planar detectors for X-and Gamma rays. The devices were measured in a single-carrier transport configuration by impinging laser light on the sample cathode. This method could be suitable for many other devices provided that they are made of materials with sufficiently high resistivity, i.e., with a sufficiently low density of intrinsic carriers. V C 2014 AIP Publishing LLC. [http://dx.
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