In this article, we propose a novel microfluidic microstrip electromagnetic band gap (EBG) sensor realized using cost-effective 3D printing technology. Microstrip sensor allows monitoring of the fluid properties flowing in the microchannel embedded between the microstrip line and ground plane. The sensor’s operating principle is based on the phase-shift method, which allows the characterization at a single operating frequency of 6 GHz. The defected electromagnetic band gap (EBG) structure is realized as a pattern in the microstrip ground plane to improve sensor sensitivity. The designed microfluidic channel is fabricated using a fused deposition modelling (FDM) 3D printing process without additional supporting layers, while the conductive layers are realized using sticky aluminium tape. The measurement results show that the change of permittivity of the fluid in the microfluidic channel from 1 to 80 results in the phase-shift difference of almost 90°. The potential application is demonstrated through the implementation of a proposed sensor for the detection of toluene concentration in toluene–methanol mixture where various concentrations of toluene were analysed.

In this paper, we present two novel dual-band bandpass filters based on surface plasmon polariton-like (SPP-like) propagation induced by structural dispersion of substrate integrated waveguide (SIW). Both filters are realized as a three-layer SIW where each layer represents a sub-SIW structure with intrinsic effective permittivity that depends on its width and filling dielectric material. The layers are designed to have effective permittivities of opposite signs in certain frequency ranges, which enables SPP-like propagation to occur at their interfaces. Since three layers can provide two distinct SPP-like propagations, the filters exhibit dual-band behaviour. A detailed theoretical and numerical analysis and numerical optimization have been used to design the filters, which were afterwards fabricated using standard printed circuit board technology. The independent choice of geometrical parameters of sub-SIWs and/or the corresponding dielectric materials provide a great freedom to arbitrarily position the passbands in the spectrum, which is a significant advantage of the proposed filters. At the same time, they meet the requirements for low-cost low-profile configuration since they are realized as SIW structures, as well as for excellent in-band characteristics and selectivity which is confirmed by the measurement results.

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