Ferroelectric (Pb,Sr)TiO 3 (PST) thin films with a perovskite structure were prepared by the sol-gel technique. PST precursor solutions were prepared from lead (II) acetate, titanium tetraisopropoxide, and strontium acetate hemihydrate with solvents of acetic acid and 2-methoxyethanol. The PST film fabricated on an Ir/SiO 2 /Si substrate with a perovskite structure exhibited a ferroelectric hysteresis curve. The Pb/Sr ratio of the PST films could be controlled, however the Ti composition was larger than the stoichiometric value. It is important to obtain stoichiometric PST films for device applications, such as ferroelectric random access memories and piezoelectric filters.

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