Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure Appl. Phys. Lett. 101, 122414 (2012) Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application Appl. Phys. Lett. 100, 052105 (2012) Significantly improved piezoelectric thermal stability of cellular polypropylene films by high pressure fluorination and post-treatments J. Appl. Phys. 111, 024111 (2012) Dynamics of solidification in Al thin films measured using a nanocalorimeter Thermal conduction across thin films is measured optically by using the surface thermal lensing effect. Pump-probe laser measurements combined with numerical modeling are used to study thermal conduction in a variety of materials as thin as 10 nm. The method is relatively simple, robust, rapid, and offers an alternative to current techniques. Thermal conductivity in gold films is found to drop from 300 to 100 W/Km when the film thickness is reduced from 2000 to 100 nm. Results for silver, tin and aluminum films are also presented and compared with results from other studies.

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The growth, by MOVPE, of a range of antimonide-based material systems suitab!e for providing devices responsive to 2-4 pm wavelength radiation is reported. Photodetectors with external quantum efficiencies of 60% at 2.2 pm have been fabricated from an InGaSb homojunction. In order to examine the possibility of tuning the wavelength of emission or detection by using a strained single quantum well (ssow) of InGaSbIGaSb this has been grown in the depletion region of a GaSb homojunction. need for conventional doping. Using the crossed-gap alignment of InAsiGaSb we can form a diode-like structure. The most promising devices have a turn-on voltage VTo of 0.7V (1 mA), and a typical reverse voltage V, = -12V (0.1 mA) and a best V, of -12 V (IO PA) for a 100 pm diameter device with some evidence of avalanche breakdown in the structure.Abrupt doping junctions have been formed between GaSb and GaAs:Si substrates. The mismatch between the layers is ameliorated by using a low-temperature buffer layer to improve the interface. Avalanche breakdown starts at -4.5 V in these structures and reverse bias currents of