The use of a double textured structure for improving the light extraction efficiency of an 860 nm GaAs vertical-cavity surface emitting laser (VCSEL) is investigated. The textured structure was formed on both surface of a GaP top layer and the surface of a SiN film used as an anti-reflection film. The measurement of the emission spectrum indicated that the light extraction efficiency of a VCSEL was increased by using it as a textured top surface as well as an anti-reflection film either without or with a textured surface. Significant increases in the light extraction efficiency were observed in the VCSEL with both a textured top structure and textured anti-reflection structure. The optical properties of VCSEL chips were used to obtain the highest output power of 127 mW with a double textured structure, which exhibits a relative increase of approximately 73% when compared to that of a conventional VSCEL (75 mW).