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The memory behavior of an MNS capacitor caused by high voltage pulses is described. The instantaneous charge transfer during pulsing is measured and analyzed, and the results compared favorably with those from the C-V measurement. With this technique the charge transfer was found to be essentially insensitive to temperature up to 300°C. By means of step-etch tests the stored charge was found to be located within 100 Å of the interface. Tunneling is believed to be the conduction mechanism.