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SynopsisZ -V characteristics for synthetic melanin were investigated a t -10 and 25°C. I t was found that the Ohm law is valid for low voltages whereas the Child law holds for higher ones. Furthermore, the steady state electrical conductivity was estimated. The change of activation energy from 0.76 eV for low temperatures to 1.58 eV was noticeable near 0°C.

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The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon and glass substrates. The structures were deposited using diethylzinc (DEZ) and deionized water as zinc and oxygen precursors. A precursor of trimethylaluminum (TMA) was used to introduce the aluminum dopant. The present study of ALD-deposited ZnO and AZO films was motivated by their applications in photovoltaics. We attempted to expose several properties of such films. Structural, optical (including ellipsometric measurements) and electrical investigations were performed. We discussed the relations between samples doped with different Al fractions and their properties.