Articles you may be interested inEffect of diamagnetic substitution on growthinduced anisotropy in (YBi)3Fe5O1 2 J. Appl. Phys. 60, 718 (1986); 10.1063/1.337419Growthinduced anisotropy and damping versus temperature in narrow linewidth, 1μm YIG(Bi,Ca,Si) bubble filmsIn this study the mechanism causing growth-induced anisotropy Kug in YBiCaGeSi-IG has been discussed and elucidated using the stepwise regression method by computer. In the stepwise regression analysis of a lot of the experimental data, we take K ug as a dependent variable Y, and Bi content, growth temperature T g , film growth rate V g , film thickness h, saturation magnetization 4TrMs, rotation rate of substrates, Y content as predictors, X I , X 2' X 3' X 4' X 5' X 6' X 7 , respectively. In our experiments, Bi content and saturation magnetization 41TMs of the samples were changed from 0.20 to 0.42 and from 330 G to 1008 G, respectively. When F-to-enter threshold F = 0.5, 1,2,3,4, the regression Eq. (3) is obtained as follows:where mUltiple correlation coefficient R = 0.86, standard error S3 = 0.675 X 1if. Since F= 15.6>F oo1 (2,11) = 7.21 for the regression Eq. (3), it is significant at a = 0.01 level of significance. This shows that there is an approximate linear relation between growth-induced anisotropy Kug and Bi content in films, and saturation magnetization 41TMs in YBiCaGeSi-IG material.