A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky niiser diode has been developed for 77 GHz autoniotive radar systems. It facilitates the realization 0 1 i~ high performance millimeter-wave radar front-end with a minimum amount of chip area and, coiisequently, low production costs.
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