The addition of 1%–5% Mn to Ni–Fe films reduces Hk by ∼3× and increases magnetostriction by ∼4×, but also raises dispersion by ∼3×, so that the product α50Ku stays within ±10% over the range of interest of from 1% to 5% Mn. Since high dispersion (α50>5°) was found to cause disturbs in memory applications, it is not advisable to use more than ∼3% Mn for a memory with 20-mil-wide film strips.
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