We report the first demonstration of a phonon-mediated silicon detector technology that provides a primary phonon measurement in a low-voltage region, and a simultaneous indirect measurement of the ionization signal through Neganov-Trofimov-Luke amplification in a high voltage region, both in a monolithic crystal. We present characterization of charge and phonon transport between the two stages of the detector and the resulting background discrimination capability at low energies. This new detector technology has the potential to significantly enhance the sensitivity of dark matter and coherent neutrino scattering experiments beyond the capabilities of current technologies that have limited discrimination at low energies.