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In this work the results of investigation of Cd 1-x Mn x Te (x=0.01, 0.03, 0.05) solid solutions synthesis and their thin films' obtaining technology have been represented. Epitaxial films of monocrystalline Cd 1-х Mn х Te semimagnetic semiconductors were obtained on mica substrate by MBC method. Lattice parameters and crystal structure of samples were defined with X-ray diffraction method. It has been studied the electrophysical parameters. Defect formation energy has been calculated for Cd 1-х Mn х Te semimagnetic semiconductors by Ab-initio method using Atomistix Toolkit program. We have studied the dependence of defect formation energy on supercell size for charged vacancy and interstitial defects in Cd 1-х Mn х Te thin films

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The features of growth epitaxial films PbSe1Te (x = 0,2) on substrates BaF2 by the epitaxy of molecular beam method are investigated. The optimum meanings of speed of condensation are certain and the temperatures of a substrate at which turn out of a film with perfect structure. The complex research of features of growth films in corellation with their physical properties is carried out. The structure films was supervised electronographic, X-ray diffractometric and electron-microscope by methods. It is established, that epitaxial films PbSe1Te on BaF2 (1 1 1) substrates grow by plane (1 1 1). It revealed, that epitaxial films brought up at temperatures of substrate 673K have monocrystal structure with half-width X-ray diffraction swing wi!2 = 80÷100" and smooth surface without secondary inclusions.

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