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Transparent p-type conductive BaCuSeF films prepared by pulsed laser deposition (PLD) were studied for application to tandem configuration solar cells. The BaCuSeF films were deposited at low substrate temperatures (T S ) of 150, 200, 250, and 300°C. The films prepared at T S ; 200°C showed considerably high transmittance in the visible light region. The highest transmittance of 63% was obtained for the film deposited at T S = 300°C. All of the films showed p-type conductivities of more than 1 S/cm. These BaCuSeF films were deposited on the CdTe surface of CdS/ CdTe solar cells. A high conversion efficiency of 2.82% was obtained for the solar cell with the transparent p-type conductive BaCuSeF film deposited at T S = 200°C. The higher efficiency of 3.12% was obtained by inserting a thin Ni 0.97 Li 0.03 O buffer layer between the BaCuSeF and CdTe layers.