No abstract

We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570 o C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.