Combining inorganic perovskite quantum dots (IPQDs) devices with Si platform is an interesting topic since it is helpful for realizing the optoelectronic integration as well as the multiple‐functional electronics in a compact and lightweight format. However, the poor energy band alignment between the IPQDs and Si limits the device performance, such as the emitting efficiency. Here, a light‐emitting diodes (LEDs) structure is proposed by inserting a poly‐TPD (poly[N,N′‐bis(4‐butylphenyl)‐N,N′‐bis(phenyl)‐benzidine]) layer between the n‐type IPQDs and the p‐type Si substrate. The light‐emitting diode based on CsPbI3 quantum dots reaches an output power density of 1.68 mW cm−2 with external quantum efficiency of 0.91%, which is enhanced by 34‐fold compared with the reference device. Similar emission enhancement is also observed in the device based on CsPbBr3 quantum dots but the output power density is only 0.6 mW cm−2. In order to further improve the emission intensity of CsPbBr3 quantum dots devices, Au nanoparticals (Au NPs) are introduced into the hole injection layer, the output power density increases to 1.2 mW cm−2, which is induced by the localized surface plasmon resonance coupling between Au NPs and CsPbBr3 excitons. The results demonstrate that high‐efficiency and stable Si‐based perovskite LEDs can be realized by rational optical and electronic design.

Inorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity and decreased the current density of the PeLEDs based on CsPbI3 quantum dots (QDs) and p-type Si substrate through an alternating current (AC) driving mode. For the different driving voltage modes (under a sine pulsed bias or square pulsed bias), a frequency-dependent electroluminescent (EL) behavior was observed. The devices under a square pulsed bias present a stronger EL intensity under the same voltage due to less thermal degradation at the interface. The red PeLEDs under a square pulsed bias driving demonstrate that the EL intensity drop-off phenomenon was further improved, and the integrated EL intensity shows the almost linear increase with the increasing driving voltage above 8.5 V. Additionally, compared to the direct current (DC) driving mode, the red PeLEDs under the AC condition exhibit higher operating stability, which is mainly due to the reducing accumulated charges in the devices. Our work provides an effective approach for obtaining strong brightness, low power consumption, and high stability light-emitting devices, which will exert a profound influence on coupling LEDs with household power supplies directly.

Building 3D electronics represents a promising method for the integration of more functionalities into a given footprint. To this end, stacked multilevel silicon nanowires (SiNWs) are ideal multilevel channels to construct high‐density 3D electronics. 3D vectorial self‐assembled growth of orderly lateral SiNWs is accomplished directly upon oblique or vertical sidewalls, which are otherwise difficult to address by conventional lithography, led by indium droplets that absorb amorphous silicon thin film coated on the sidewalls to produce SiNW stacks at only 350 °C. With the guidance of sidewall terraces formed by multilayer or alternating etching approaches, ultralong supported or suspended multilevel SiNW stacks can be easily mass produced with tailored geometry and average diameter and spacing down to 50 and 100 nm, respectively. Prototype stacked multi‐SiNW‐channel transistors, with a fin‐gate configuration, are also fabricated and demonstrate an impressive high Ion/Ioff current ratio >107, a hole mobility of 60 cm2/V−1 s−1, and a rather low leakage current. These results highlight the unique potential and versatility of a nanodroplet‐assisted self‐assembled growth in constructing more complex and advanced 3D stacked channel electronics.