The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility 1,2 in graphene and the large direct band gaps in transition metal dichalcogenides MX 2 (M = Mo or W, X = S, Se) monolayers 3 , highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priorities in the field is to search for new 2D crystalline systems with structural and electronic properties that can be exploited for device development. In this letter, we report on the unusual quantum transport properties of the 2D ternary transition

Compared to the p-n junction type device (Device A) with an n-type ZnO nanowire (n-ZnO)/p-type silicon (p-Si) hybrid structure, the newly designed device (Device B) with an n-ZnO/reduced graphene oxide sheet (rGO)/p-Si hybrid structure displays interesting electrical characteristics such as lower turn-on voltage and better current symmetry. The addition of rGO between n-ZnO and the p-Si substrate enables tuning of the p-n junctions into back-to-back Schottky junctions and lowering of the turn-on voltages, implying great potential applications in electronic and optoelectronic devices. The electrical characteristics and operating mechanism of these two devices are fully discussed.

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In this paper, we report an efficient preparation of silver telluride by rapid solid-state microwave heating. Single phase products have been obtained within as little as 30 min of irradiation time. The rate of the synthesis is significantly increased as compared to the solid state reaction method in a conventional furnace. The quality of the as-prepared samples are attested by structural, compositional and magnetoresistance characterizations.