The use of the excited state quantum dot lasers for high speed direct modulation is proposed and demonstrated. A direct comparison of lasers utilizing the ground state and excited state from the same laser material reveals a factor of two increase in the K-factor limited bandwidth. This is attributed to an increase in the saturated gain and reduced carrier scattering time of the excited state compared to the ground state.

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Low threshold current density and negative characteristic temperature 1.3 μ m InAs self-assembled quantum dot lasers Appl.

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