Multilayer ceramic capacitor (MLCC) production and sales figures are the highest among fine-ceramic products developed in the past 30 years. The total worldwide production and sales reached 550 billion pieces and 6 billion dollars, respectively in 2000. In the course of progress, the development of base-metal electrode (BME) technology played an important role in expanding the application area. In this review, the recent progress in MLCCs with BME nickel (Ni) electrodes is reviewed from the viewpoint of nonreducible dielectric materials. Using intermediate-ionic-size rare-earth ion (Dy2O3, Ho2O3, Er2O3, Y2O3) doped BaTiO3 (ABO3)based dielectrics, highly reliable Ni-MLCCs with a very thin layer below 2µm in thickness have been developed. The effect of site occupancy of rare-earth ions in BaTiO3 on the electrical properties and microstructure of nonreducible dielectrics is studied systematically. It appears that intermediate-ionic-size rare-earth ions occupy both Aand B-sites in the BaTiO3 lattice and effectively control the donor/acceptor dopant ratio and microstructural evolution. The relationship between the electrical properties and the microstructure of Ni-MLCCs is also presented.

The impedance of a BaTiO3 (BT)-based multilayer ceramic capacitor with a nickel internal electrode (Ni-MLCC) was investigated by measuring the frequency domain at various temperatures. All the obtained impedance data could be successfully fitted to a 4-RC section electrical equivalent network. The 4-RC section electrical equivalent network was successfully correlated to the microstructure: the core, the shell, the grain boundary, and the ceramic/internal electrode interface regions. Based on this electrical equivalent network, the electrical properties including the Curie-Weiss law, the current-voltage characteristics, and dc electrical degradation, were well explained. A model for the degradation behavior for BT-based Ni-MLCC with thin active layer thickness was proposed.

Electrical properties and microstructures of a holmium-doped (Ba1.01Mg0.01)O1.02(Ti0.98Zr0.02)O2 system were studied. Additions of Ho2O3 had little effect in preventing the dielectrics from reducing at high temperature, but the resistivity at low temperature increased with increasing amount of Ho2O3 when treated in oxidizing atmosphere at the cooling stage. From transmission electron micrograph (TEM) observation, it was noted that the microstructure exhibited a grain core-grain shell structure. Newly developed X7R multilayer ceramic capacitors with Ni electrodes revealed highly reliable electrical properties.

The influences of the Nb/Co ratio on electrical properties, densification behavior, and microstructural evolution were investigated on ceramics in the ternary system BaTiO 3 -Nb 2 O 5 -Co 3 O 4 . Temperature-stable dielectrics were obtained using either a large amount of Nb + Co or a large Nb/Co ratio. The sintering characteristics and electrical properties were studied for the niobium-rich composition (Nb/Co = 3.00; Comp.N) and the cobalt-rich composition (Nb/Co = 1.67; Comp.C) with the same Nb + Co amount of 2 at.%. The temperature characteristic of the dielectric constant was flat, irrespective of the firing temperature, for Comp.N, whereas it was dependent largely on the firing temperature for Comp.C. The grains did not grow in Comp.N but grew in Comp.C.